The MJ15004G is a high power NPN bipolar junction transistor (BJT) designed for use in power amplifier and high current switching applications. This discrete semiconductor component is capable of handling high power levels and has a high current rating, making it suitable for a wide range of applications.
Key features of the MJ15004G include a collector-emitter voltage (VCEO) of 140V, a collector current (IC) of 30A, and a power dissipation (PD) of 200W. This transistor has a low saturation voltage and high current gain, making it ideal for use in high power amplifiers requiring high current and voltage capabilities.
The MJ15004G is housed in a TO-3 package, which allows for easy mounting on a heat sink to dissipate heat generated during operation. It also has a wide temperature range of -65°C to 200°C, ensuring reliable performance in various operating conditions.
Overall, the MJ15004G is a reliable and high-performance discrete semiconductor component suitable for demanding power amplifier and high current switching applications
