The FQD2N100TM is a discrete semiconductor component that is a N-Channel MOSFET transistor. It is designed for high power switching applications and is ideal for use in industrial and automotive applications. This MOSFET has a drain-source voltage rating of 1000V and a continuous drain current rating of 2A, making it suitable for high voltage and current applications.
One key feature of the FQD2N100TM is its low on-resistance, which helps to minimize power losses and improve efficiency in switching applications. This MOSFET also has a fast switching speed, allowing for quick and efficient operation in high frequency switching applications.
Other features of the FQD2N100TM include a compact TO-252 package design for easy mounting and installation, as well as a high level of reliability and durability for long-term performance. Overall, the FQD2N100TM is a high-quality, high performance discrete semiconductor component that is well-suited for a wide range of industrial and automotive applications
