BFR30LT1G

Name: BFR30LT1G
Brand: Onsemi
SKU: B13D12-DS
Price: 0.4381 USD
Availability: InStock

JFET N-CH 225MW SOT23

1 : $0.4381

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Dasenic Part Number

B13D12-DS

Manufacturer

Onsemi

Manufacturer Part #

BFR30LT1G

Customer Reference

Datasheet

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Sample

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43 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

TO-236-3, SC-59, SOT-23-3

Quantity

Unit Price

$ 0.4381

Total

$ 0.44

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Onsemi
Discrete Semiconductor Devices	Transistors
Product Status	Obsolete
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-236-3, SC-59, SOT-23-3
Power - Max	225 mW
Supplier Device Package	SOT-23-3 (TO-236)
F E T Type	N-Channel
Drain to Source Voltage ( Vdss)	25 V
Input Capacitance ( Ciss) ( Max) @ Vds	5pF @ 10V
Current - Drain ( Idss) @ Vds ( Vgs=0)	4 mA @ 10 V
Voltage - Cutoff ( V G S off) @ Id	5 V @ 0.5 nA

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Environmental & Export Classifications

EU RoHS Status	RoHS Compliant
REACH Status	Vendor is not defined
US ECCN	Provided as per user requirements
China RoHS Status	Orange Symbol: Safe for use during the environmental protection period

Description (v) Features

The BFR30LT1G is a NPN Silicon RF Transistor designed for rugged industrial use. It is a high-performance, ultra-low noise transistor with low capacitance and high current gain. It is ideal for applications requiring high frequency operation such as RF amplifiers, oscillators, and mixers. The BFR30LT1G has a maximum power dissipation of 200mW and can operate at frequencies up to 300MHz. It features a compact SOT-23 package for easy integration into circuit designs. The transistor offers high reliability and long-term stability, making it suitable for demanding industrial environments. Its high cutoff frequency and low noise figure make it a versatile component for various RF applications