PMBFJ177,215

JFET P-CH 30V SOT23

1 : $1.0200

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Dasenic Part Number

C8A696-DS

Manufacturer

NXP Semiconductors

Manufacturer Part #

PMBFJ177,215

Customer Reference

Datasheet

Download

Sample

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365 Days Warranty
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1719 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Cut Tape (CT) Dasenic-Reel®

Quantity

Unit Price

$ 1.02

Total

$ 1.02

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	NXP Semiconductors
Discrete Semiconductor Devices	Transistors
Product Status	Obsolete
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Power - Max	300 mW
Supplier Device Package	SOT-23 (TO-236AB)
F E T Type	P-Channel
Drain to Source Voltage ( Vdss)	30 V
Input Capacitance ( Ciss) ( Max) @ Vds	8pF @ 10V (VGS)
Voltage - Breakdown ( V( B R) G S S)	30 V
Current - Drain ( Idss) @ Vds ( Vgs=0)	1.5 mA @ 15 V
Voltage - Cutoff ( V G S off) @ Id	800 mV @ 10 nA
Resistance - R D S( On)	300 Ohms
Base Product Number	PMBFJ1
Packaging	Dasenic-Reel®
Packaging	Cut Tape (CT)
Packaging	Tape & Reel (TR)

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Environmental & Export Classifications

EU RoHS Status	ROHS3 Compliant
MSL Rating	1 (Unlimited, 30°C/85%RH)
REACH Status	REACH Unaffected
US ECCN	EAR99
HTS US	8541.21.0095
China RoHS Status	Orange Symbol: Safe for use during the environmental protection period

Description (v) Features

The PMBFJ177,215 is a N-channel junction field-effect transistor (JFET) designed for high gain, low noise, and low distortion applications. It features a low input capacitance, making it ideal for high-frequency amplification. The PMBFJ177,215 also has a high input impedance, providing good signal-to-noise ratio. This component has a maximum drain-source voltage of 40V and a continuous drain current of 132mA. It is housed in a SOT-23 package, making it small and easy to work with in compact designs. Overall, the PMBFJ177,215 is a reliable and efficient option for amplification and signal processing in discrete semiconductor applications