2N3823

Name: 2N3823
Brand: Microchip Technology
SKU: 19D188-DS
Price: 10.233 USD
Availability: InStock

N CHANNEL JFET

1 : $10.2330

First-time registration with orders over $2,000 receives a $100 coupon. Register Now !

Dasenic Part Number

19D188-DS

Manufacturer

Microchip Technology

Manufacturer Part #

2N3823

Customer Reference

Datasheet

Download

Sample

Technical Support
Issue An Invoice
365 Days Warranty
Fast Refund

1662 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

TO-206AF, TO-72-4 Metal Can

Quantity

Unit Price

$ 10.233

Total

$ 10.23

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Microchip Technology
Discrete Semiconductor Devices	Transistors
Product Status	Active
Operating Temperature	-55°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-206AF, TO-72-4 Metal Can
Power - Max	300 mW
Supplier Device Package	TO-72
F E T Type	N-Channel
Drain to Source Voltage ( Vdss)	30 V
Input Capacitance ( Ciss) ( Max) @ Vds	6pF @ 15V
Voltage - Breakdown ( V( B R) G S S)	30 V
Current - Drain ( Idss) @ Vds ( Vgs=0)	20 mA @ 15 V
Voltage - Cutoff ( V G S off) @ Id	8 V @ 500 pA

Kindly contact our sales Rep to obtain the data you desire for 2N3823.
lauren@dasenic.com

Environmental & Export Classifications

EU RoHS Status	RoHS Compliant
REACH Status	REACH is not affected
US ECCN	EAR99
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The 2N3823 is a discrete semiconductor component commonly used in electronic circuits. It is a PNP silicon transistor with a maximum collector current of 500 mA and a maximum power dissipation of 625 mW. The 2N3823 is housed in a TO-92 package, making it easy to integrate into a variety of circuit designs. It has a low collector-base voltage of -40 V, a low collector-emitter voltage of -40 V, and a high gain of 100 minimum. This transistor is commonly used in applications such as amplification, switching, and signal processing. Its compact size, high gain, and low power dissipation make it a popular choice for many electronic projects