IRF8736TRPBF

Name: PSUA2R3343R-SS
Brand: Cornell Dubilier
SKU: 1BFA97-DS
Price: 8.775 USD
Availability: InStock

MOSFET N-CH 30V 18A 8SO

1 : $0.4072

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Dasenic Part Number

BABCEA-DS

Manufacturer

Infineon Technologies

Manufacturer Part #

IRF8736TRPBF

Customer Reference

Datasheet

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Sample

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57600 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

SOP-8

Quantity

Unit Price

$ 0.4072

Total

$ 0.41

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Infineon Technologies
Discrete Semiconductor Devices	Single MOSFETs
Product Status	Active
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Supplier Device Package	8-SO
Power Dissipation ( Max)	2.5W (Ta)
F E T Type	N-Channel
Drain to Source Voltage ( Vdss)	30 V
Current - Continuous Drain ( Id) @ 25° C	18A (Ta)
Rds On ( Max) @ Id, Vgs	4.8mOhm @ 18A, 10V
Vgs(th) ( Max) @ Id	2.35V @ 50µA
Gate Charge ( Qg) ( Max) @ Vgs	26 nC @ 4.5 V
Input Capacitance ( Ciss) ( Max) @ Vds	2315 pF @ 15 V
Drive Voltage ( Max Rds On, Min Rds On)	4.5V, 10V
Vgs ( Max)	±20V

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Environmental & Export Classifications

EU RoHS Status	RoHS Compliant
REACH Status	REACH is not affected
US ECCN	EAR99
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The IRF8736TRPBF is a N-channel Power MOSFET transistor designed for use in high current applications. It features a maximum drain-source voltage of 30V and a continuous drain current of 22A, making it suitable for a wide range of power management applications. The transistor has a low threshold voltage of 2.5V, allowing for efficient switching and reducing power losses. It also has a low on-resistance of 8.5mΩ, ensuring minimal voltage drop across the transistor when it is conducting. The IRF8736TRPBF is housed in a compact and industry-standard TO-263 package, making it easy to integrate into existing circuit designs. Overall, this discrete semiconductor component offers high performance and reliability for various power electronics applications