IRF830PBF

Name: IRF830PBF
Brand: Vishay Intertechnology
SKU: 923AA1-DS
Price: 0.8216 USD
Availability: InStock

MOSFET N-CH 500V 4.5A TO220AB

1 : $0.8216

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Dasenic Part Number

923AA1-DS

Manufacturer

Vishay Intertechnology

Manufacturer Part #

IRF830PBF

Customer Reference

Datasheet

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Sample

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13909 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

TO-220

Quantity

Unit Price

$ 0.8216

Total

$ 0.82

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Vishay Intertechnology
Discrete Semiconductor Devices	Single MOSFETs
Product Status	Active
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Supplier Device Package	TO-220AB
Power Dissipation ( Max)	74W (Tc)
F E T Type	N-Channel
Drain to Source Voltage ( Vdss)	500 V
Current - Continuous Drain ( Id) @ 25° C	4.5A (Tc)
Rds On ( Max) @ Id, Vgs	1.5Ohm @ 2.7A, 10V
Vgs(th) ( Max) @ Id	4V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs	38 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds	610 pF @ 25 V
Drive Voltage ( Max Rds On, Min Rds On)	10V
Vgs ( Max)	±20V
Base Product Number	IRF830
Packaging	Tube

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Environmental & Export Classifications

EU RoHS Status	ROHS3 Compliant
MSL Rating	1 (Unlimited, 30°C/85%RH)
US ECCN	EAR99
HTS US	8541.29.0095
REACH Status	REACH is not affected
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The IRF830PBF is a discrete semiconductor component, specifically a power MOSFET transistor designed for high-speed, high-current switching applications. It features a voltage rating of 500V and a continuous drain current of 4.5A, making it suitable for power supplies, motor controls, and DC-DC converters. This MOSFET has a low on-resistance of 1.8 ohms and a fast switching speed, enabling efficient and reliable performance in a range of electronic circuits. The IRF830PBF is housed in a TO-220 package, making it easy to mount and integrate into various PCB designs. Overall, this discrete semiconductor component offers excellent power handling capabilities and is ideal for applications requiring high efficiency and performance