The IRF7769L1TRPBF is a discrete semiconductor component that is a MOSFET transistor designed for use in various electronic circuits. It is a dual N-channel enhancement mode power MOSFET that is capable of handling high power and voltage levels.
Key features of the IRF7769L1TRPBF include a low on-resistance of 8.5 milliohms, a high drain-source voltage rating of 30 volts, and a maximum continuous drain current of 38 amps. It also has a low gate threshold voltage of 1.5 volts, making it easy to drive with low voltage control signals.
This component is suitable for use in various applications such as power supplies, motor control, and DC-DC converters. It is designed to be durable and reliable, with a high pulse power rating of 160 watts and a junction temperature range of -55 to 150 degrees Celsius. Overall, the IRF7769L1TRPBF is a high-performance and versatile semiconductor component that can handle demanding power requirements in a wide range of electronic circuits
