The BSC0901NSATMA1 is a discrete semiconductor component manufactured by Infineon Technologies. It is a N-channel enhancement mode MOSFET with a low on-resistance and high-speed switching capability. This component is housed in a small SOT-223 package, making it suitable for various space-constrained applications.
Key features of the BSC0901NSATMA1 include a drain-source voltage rating of 100V, a continuous drain current of 7.5A, and a low on-resistance of 140mΩ. It has a fast switching speed with a typical turn-on time of 6.5ns and a turn-off time of 15ns, making it ideal for high-frequency applications.
The BSC0901NSATMA1 also has a low gate threshold voltage of 2.1V, allowing for easy gate control and compatibility with low-voltage drive circuits. It has a high avalanche energy rating, making it suitable for rugged applications where high transient voltages may be encountered.
Overall, the BSC0901NSATMA1 is a versatile and high-performance discrete semiconductor component that is well-suited for a wide range of power management and switching applications
