DMP10H400SEQ-13

Name: EKMB4391111K
Brand: Panasonic
SKU: A563C6-DS
Price: 19.386 USD
Availability: InStock

MOSFET P-CH 100V 2.3A/6A SOT223

1 : $0.3406

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Dasenic Part Number

E6CCEE-DS

Manufacturer

Diodes Incorporated

Manufacturer Part #

DMP10H400SEQ-13

Customer Reference

Datasheet

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Sample

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13930 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

TO-261-4, TO-261AA

Quantity

Unit Price

$ 0.3406

Total

$ 0.34

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Diodes Incorporated
Discrete Semiconductor Devices	Single MOSFETs
Product Status	Active
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Supplier Device Package	SOT-223-3
Power Dissipation ( Max)	2W (Ta), 13.7W (Tc)
F E T Type	P-Channel
Drain to Source Voltage ( Vdss)	100 V
Current - Continuous Drain ( Id) @ 25° C	2.3A (Ta), 6A (Tc)
Rds On ( Max) @ Id, Vgs	250mOhm @ 5A, 10V
Vgs(th) ( Max) @ Id	3V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs	17.5 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds	1239 pF @ 25 V
Drive Voltage ( Max Rds On, Min Rds On)	4.5V, 10V
Vgs ( Max)	±20V

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Environmental & Export Classifications

EU RoHS Status	RoHS Compliant
REACH Status	REACH is not affected
US ECCN	EAR99
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The DMP10H400SEQ-13 is a N-channel enhancement mode power MOSFET produced by Diodes Incorporated. It is designed for high voltage applications with a maximum drain-source voltage of 400V and a continuous drain current of 10A. This MOSFET has a low RDS(ON) of 0.63 ohms, allowing for efficient power dissipation. It also features a fast switching speed and a low gate charge, making it suitable for high frequency applications. The DMP10H400SEQ-13 is housed in a TO-252 package, providing a compact and reliable solution for power management circuits in a variety of applications