The DMN4800LSS-13 is a N-channel enhancement mode MOSFET transistor manufactured by Diodes Incorporated. It is a discrete semiconductor component designed for use in various electronic applications.
Key features of the DMN4800LSS-13 include a low on-resistance of 40mΩ, a high current rating of 9.1A, and a low threshold voltage of 1.6V. The MOSFET has a maximum drain-source voltage of 30V, making it suitable for low voltage applications.
The DMN4800LSS-13 is housed in a small PowerDI 123 package, allowing for easy integration into circuit designs with limited space. It has a wide operating temperature range of -55°C to 150°C, ensuring reliable performance in extreme conditions.
Overall, the DMN4800LSS-13 is a high-performance, compact MOSFET transistor ideal for use in power management, load switching, and other electronic applications where efficient power handling is critical