2DB1188Q-13

Name: 5SGXMA5H2F35I3LN
Brand: Intel Corporation
SKU: 8A37A0-DS
Availability: InStock

32V 1W 120@500mA,3V 2A PNP SOT-89 Bipolar Transistors - BJT

1 : $0.2173

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Dasenic Part Number

A709D6-DS

Manufacturer

Diodes Incorporated

Manufacturer Part #

2DB1188Q-13

Customer Reference

Datasheet

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Sample

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7500 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

SOT-89

Quantity

Unit Price

$ 0.2173

Total

$ 0.22

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Diodes Incorporated
Discrete Semiconductor Devices	Single, Pre-Biased Bipolar Transistors
Product Status	Active
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-243AA
Power - Max	1 W
Supplier Device Package	SOT-89-3
Transistor Type	PNP
Current - Collector ( Ic) ( Max)	2 A
Voltage - Collector Emitter Breakdown ( Max)	32 V
Vce Saturation ( Max) @ Ib, Ic	800mV @ 200mA, 2A
Current - Collector Cutoff ( Max)	100nA (ICBO)
D C Current Gain (h F E) ( Min) @ Ic, Vce	120 @ 500mA, 3V
Frequency - Transition	120MHz
Base Product Number	2DB1188
Packaging	Dasenic-Reel®
Packaging	Cut Tape (CT)
Packaging	Tape & Reel (TR)

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Environmental & Export Classifications

EU RoHS Status	ROHS3 Compliant
MSL Rating	1 (Unlimited, 30°C/85%RH)
REACH Status	REACH Unaffected
US ECCN	EAR99
HTS US	8541.29.0075
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The 2DB1188Q-13 is a discrete semiconductor component that is designed for high-power switching applications. This component features a high voltage rating of 1200V, making it suitable for use in various industrial and automotive applications. The 2DB1188Q-13 also has a low on-state voltage drop and fast switching speeds, allowing for efficient power conversion and control. Additionally, this component has a compact and robust design, ensuring reliable performance in harsh operating conditions. Overall, the 2DB1188Q-13 is a versatile and high-performance semiconductor component that offers superior power handling capabilities for a wide range of applications