The AO3407A is a P-Channel enhancement mode field-effect transistor (FET) with a maximum drain-source voltage of -30V and a continuous drain current of -5.6A. This discrete semiconductor component is designed for use in a wide range of applications, including power management, load switching, and battery protection circuits.
Key features of the AO3407A include low on-resistance, high current capability, and fast switching speeds. It has a low gate threshold voltage of -2.5V, making it suitable for use in low-voltage applications. The component is housed in a compact DFN-8 package, which allows for easy integration into space-constrained PCB layouts.
The AO3407A is suitable for use in various portable electronic devices, such as smartphones, tablets, and laptops, where efficient power management is crucial. Its high performance and robust design make it a reliable choice for demanding applications that require high power handling capabilities and low power dissipation
