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Wolfspeed C2M0160120D

Name: C2M0160120D
Brand: Wolfspeed
SKU: C2M0160120D-DS
Price: 7.4970 USD
Availability: InStock
Rating: 4.8 (42 reviews)

In Stock: 4230

MOQ: 1

2 Price Tiers

Mfr.Part # :C2M0160120D
Manufacturer :Wolfspeed
Dasenic # :C2M0160120D-DS
Datasheet : C2M0160120D Datasheet PDF
Description : SICFET N-CH 1200V 19A TO247-3 TO-247-3
Package :TO-247-3
Unit Price: $7.4970
Total: $7.50

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Wolfspeed C2M0160120D technical specifications, attributes, parameters.

Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single

Product Status:Not For New Designs

Operating Temperature:-55°C ~ 150°C (TJ)

Mounting Type:Through Hole

Package / Case:TO-247-3

Technology:SiCFET (Silicon Carbide)

Supplier Device Package:TO-247-3

Power Dissipation ( Max):125W (Tc)

F E T Type:N-Channel

F E T Feature:-

Drain to Source Voltage ( Vdss):1200 V

Current - Continuous Drain ( Id) @ 25° C:19A (Tc)

Rds On ( Max) @ Id, Vgs:196mOhm @ 10A, 20V

Vgs(th) ( Max) @ Id:2.5V @ 500µA

Gate Charge ( Qg) ( Max) @ Vgs:32.6 nC @ 20 V

Input Capacitance ( Ciss) ( Max) @ Vds:527 pF @ 800 V

Drive Voltage ( Max Rds On, Min Rds On):20V

Vgs ( Max):+25V, -10V

C2M0160120D provided by Wolfspeed

Wolfspeed is a powerhouse semiconductor company focused on Silicon Carbide and GaN technologies.We’re leading the transformation from silicon to Silicon Carbide (SiC) and GaN as we shape the future of semiconductor markets: the transition to electric vehicles, the move to faster 5G networks, the evolution of renewable energy and energy storage, and the advancement of industrial applications. After more than 35 years of forging new technology adoption and transformation, our Wolfspeed® power and radio frequency (RF) semiconductors are leading the industry through unrivaled expertise and capacity.