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Vishay SI2318CDS-T1-GE3

Name: SI2318CDS-T1-GE3
Brand: Vishay
SKU: SI2318CDS-T1-GE3-DS
Price: 0.0804 USD
Availability: InStock

In Stock: 85236

MOQ: 1

5 Price Tiers

Mfr.Part # :SI2318CDS-T1-GE3
Manufacturer :Vishay
Dasenic # :SI2318CDS-T1-GE3-DS
Datasheet : SI2318CDS-T1-GE3 Datasheet PDF
Description : MOSFET N-CH 40V 5.6A SOT23-3
Package :-
Unit Price: $0.0804
Total: $0.08

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Vishay SI2318CDS-T1-GE3 technical specifications, attributes, parameters.

Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single

Product Status:Active

Operating Temperature:-55°C ~ 150°C (TJ)

Mounting Type:Surface Mount

Package / Case:TO-236-3, SC-59, SOT-23-3

Technology:MOSFET (Metal Oxide)

Supplier Device Package:SOT-23-3 (TO-236)

Power Dissipation ( Max):1.25W (Ta), 2.1W (Tc)

F E T Type:N-Channel

F E T Feature:-

Drain to Source Voltage ( Vdss):40 V

Current - Continuous Drain ( Id) @ 25° C:5.6A (Tc)

Rds On ( Max) @ Id, Vgs:42mOhm @ 4.3A, 10V

Vgs(th) ( Max) @ Id:2.5V @ 250µA

Gate Charge ( Qg) ( Max) @ Vgs:9 nC @ 10 V

Input Capacitance ( Ciss) ( Max) @ Vds:340 pF @ 20 V

Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V

Vgs ( Max):±20V

EU RoHS Status:ROHS3 Compliant

MSL Rating:1 (Unlimited, 30°C/85%RH)

REACH Status:REACH Unaffected

US ECCN:EAR99

HTS US:8541.29.0095

China RoHS Status:Green Symbol: Green and environmentally friendly product

SI2318CDS-T1-GE3 provided by Vishay

Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, rectifiers, MOSFETs, optoelectronics, and selected ICs) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader.