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Toshiba Semiconductor and Storage MT3S20TU(TE85L)

In Stock: 1445
MOQ: 1
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Toshiba Semiconductor and Storage MT3S20TU(TE85L) technical specifications, attributes, parameters.

Category:Discrete Semiconductor Devices/Transistors - Bipolar (BJT) - RF
Product Status:Last Time Buy
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:3-SMD, Flat Lead
Power - Max:900mW
Supplier Device Package:UFM
Transistor Type:NPN
Current - Collector ( Ic) ( Max):80mA
Voltage - Collector Emitter Breakdown ( Max):12V
D C Current Gain (h F E) ( Min) @ Ic, Vce:100 @ 50mA, 5V
Frequency - Transition:7GHz
Noise Figure (d B Typ @ f):1.45dB @ 20mA, 5V
Gain:12dB
EU RoHS Status:RoHS Compliant
REACH Status:Vendor is not defined
US ECCN:Provided as per user requirements
China RoHS Status:Green Symbol: Green and environmentally friendly product
MT3S20TU(TE85L) provided by Toshiba Semiconductor and Storage
Toshiba America Electronic Components, Inc. (TAEC) is the North America electronic components business of Toshiba. TAEC offers a broad IC and discrete product line including high-end microcontrollers, ASICs and ASSPs for automotive, multimedia, industrial, telecoms and networking applications. The company also has a wide range of power semiconductor solutions as well as storage products including Enterprise and Consumer HDDs.TAEC was established in 1989, providing design, manufacturing, marketing and sales, with offices in United States and Latin America.

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