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Infineon Technologies IKW50N65ES5XKSA1

In Stock: 21889
MOQ: 1
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Infineon Technologies IKW50N65ES5XKSA1 technical specifications, attributes, parameters.

Category:Discrete Semiconductor Devices/Transistors - IGBTs - Single
Product Status:Active
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Input Type:Standard
Power - Max:274 W
Supplier Device Package:PG-TO247-3
Reverse Recovery Time (trr):70 ns
Current - Collector ( Ic) ( Max):80 A
Voltage - Collector Emitter Breakdown ( Max):650 V
I G B T Type:Trench
Vce(on) ( Max) @ Vge, Ic:1.7V @ 15V, 50A
Current - Collector Pulsed ( Icm):200 A
Switching Energy:1.23mJ (on), 550µJ (off)
Gate Charge:120 nC
Td (on/off) @ 25° C:20ns/127ns
Test Condition:400V, 50A, 8.2Ohm, 15V
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
US ECCN:EAR99
China RoHS Status:Green Symbol: Green and environmentally friendly product
IKW50N65ES5XKSA1 provided by Infineon Technologies

Infineon Technologies AG (OTCMKTS: IFNNY) is a global semiconductor leader in power systems and IoT.
Infineon drives decarbonization and digitalization with its products and solutions. The company's semiconductor products include ASIC, Battery Management ICs, Clocks & Timing Solutions, ESD and Surge Protection, Memories Microcontroller, RF, Security & smart card solutions, Sensor, Small Signal Transistors & Diodes, Transceivers, Wireless Connectivity, Software, and more. These products are used in automotive, green industrial power, power management, sensing solutions, and security in IoT applications.
Infineon Technologies was founded in 1999 as a spin-off from Siemens AG. The company is headquartered in Neubiberg, near Munich, Germany, and boasts approximately 56,200 employees and 155 locations worldwide.

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