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Goford Semiconductor GC20N65F

Name: GC20N65F
Brand: Goford Semiconductor
SKU: GC20N65F-DS
Price: 1.2384 USD
Availability: InStock
Rating: 4.8 (42 reviews)

In Stock: 24000

MOQ: 1

3 Price Tiers

Mfr.Part # :GC20N65F
Manufacturer :Goford Semiconductor
Dasenic # :GC20N65F-DS
Datasheet : GC20N65F Datasheet PDF
Description : N650V,RD(MAX)<170M@10V,VTH2.5V~4
Package :-
Unit Price: $1.2384
Total: $1.24

Quantity	Unit Price	You Save
100+	$1.2384	-
15000+	$1.1430	7.7% save
30000+	$1.0287	16.9% save

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Goford Semiconductor GC20N65F technical specifications, attributes, parameters.

Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single

Product Status:Active

Operating Temperature:-55°C ~ 150°C (TJ)

Mounting Type:Through Hole

Package / Case:TO-220-3 Full Pack

Technology:MOSFET (Metal Oxide)

Supplier Device Package:TO-220F

Power Dissipation ( Max):34W (Tc)

F E T Type:N-Channel

F E T Feature:-

Drain to Source Voltage ( Vdss):650 V

Current - Continuous Drain ( Id) @ 25° C:20A (Tc)

Rds On ( Max) @ Id, Vgs:170mOhm @ 10A, 10V

Vgs(th) ( Max) @ Id:4.5V @ 250µA

Gate Charge ( Qg) ( Max) @ Vgs:39 nC @ 10 V

Input Capacitance ( Ciss) ( Max) @ Vds:1724 pF @ 100 V

Drive Voltage ( Max Rds On, Min Rds On):10V

Vgs ( Max):±30V

EU RoHS Status:RoHS Compliant

REACH Status:REACH is not affected

US ECCN:EAR99

China RoHS Status:Green Symbol: Green and environmentally friendly product

GC20N65F provided by Goford Semiconductor

Since the foundation in 1995, Goford Semiconductor has been developing into a global company with offices in USA, Hong Kong, Australia, Shenzhen and Jiangsu . We have been always devoting in the R&D and sales of the power Mosfets products. We focus on the energy efficiency, mobility and reliability to provide cost effective products to the market.