The SUM65N20-30-E3 is a high-performance N-channel MOSFET transistor. It is designed for high-speed switching applications in power electronics. The key features of this discrete semiconductor component include a drain-source voltage of 200V, a continuous drain current of 65A, and a maximum on-resistance of 30mΩ. The SUM65N20-30-E3 also has a low gate charge, making it ideal for minimizing switching losses and improving efficiency in power conversion circuits. This MOSFET transistor is housed in a TO-263 package, ensuring easy mounting and thermal management. Overall, the SUM65N20-30-E3 is a reliable and cost-effective solution for various power electronics applications