SQM100P10-19L_GE3

MOSFET P-CH 100V 93A TO263

1 : $2.9700

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Dasenic Part Number

F80364-DS

Manufacturer

Vishay Intertechnology

Manufacturer Part #

SQM100P10-19L_GE3

Customer Reference

Datasheet

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Sample

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37440 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Quantity

Unit Price

$ 2.97

Total

$ 2.97

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Vishay Intertechnology
Discrete Semiconductor Devices	Single MOSFETs
Product Status	Active
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Supplier Device Package	TO-263 (D²Pak)
Power Dissipation ( Max)	375W (Tc)
F E T Type	P-Channel
Drain to Source Voltage ( Vdss)	100 V
Current - Continuous Drain ( Id) @ 25° C	93A (Tc)
Rds On ( Max) @ Id, Vgs	19mOhm @ 30A, 10V
Vgs(th) ( Max) @ Id	2.5V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs	350 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds	14100 pF @ 25 V
Drive Voltage ( Max Rds On, Min Rds On)	4.5V, 10V
Vgs ( Max)	±20V

Kindly contact our sales Rep to obtain the data you desire for SQM100P10-19L_GE3.
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Environmental & Export Classifications

EU RoHS Status	RoHS Compliant
REACH Status	REACH is not affected
US ECCN	EAR99
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The SQM100P10-19L_GE3 is a discrete semiconductor component designed for high power applications. It is a P-channel MOSFET with a voltage rating of 100V and a continuous drain current of 100A. The component has a low on-resistance of 10mΩ, which allows for efficient power flow and minimal power loss. It is housed in a TO-247 package, providing good thermal conductivity to help dissipate heat generated during operation. The SQM100P10-19L_GE3 is suitable for use in power supplies, motor controls, and other high power applications where reliable switching is required. Its high performance characteristics make it a popular choice for designers looking for a robust and efficient power semiconductor solution