SQ2361AEES-T1_GE3

Name: SQ2361AEES-T1_GE3
Brand: Vishay Intertechnology
SKU: 89B708-DS
Price: 0.576 USD
Availability: InStock

MOSFET P-CH 60V 2.8A SSOT23

1 : $0.5760

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Dasenic Part Number

89B708-DS

Manufacturer

Vishay Intertechnology

Manufacturer Part #

SQ2361AEES-T1_GE3

Customer Reference

Datasheet

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Sample

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46360 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Cut Tape (CT) Dasenic-Reel®

Quantity

Unit Price

$ 0.576

Total

$ 0.58

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Vishay Intertechnology
Discrete Semiconductor Devices	Single MOSFETs
Product Status	Active
Operating Temperature	-55°C ~ 175°C (TA)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Power Dissipation ( Max)	2W (Tc)
F E T Type	P-Channel
Drain to Source Voltage ( Vdss)	60 V
Current - Continuous Drain ( Id) @ 25° C	2.8A (Tc)
Rds On ( Max) @ Id, Vgs	170mOhm @ 2.4A, 10V
Vgs(th) ( Max) @ Id	2.5V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs	15 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds	620 pF @ 30 V
Drive Voltage ( Max Rds On, Min Rds On)	10V
Vgs ( Max)	±20V
Series	Automotive, AEC-Q101, TrenchFET®
Base Product Number	SQ2361
Packaging	Dasenic-Reel®
Packaging	Cut Tape (CT)
Packaging	Tape & Reel (TR)

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Environmental & Export Classifications

EU RoHS Status	ROHS3 Compliant
MSL Rating	1 (Unlimited, 30°C/85%RH)
US ECCN	EAR99
HTS US	8541.29.0095
REACH Status	REACH is not affected
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The SQ2361AEES-T1_GE3 is a discrete semiconductor component that is a P-channel enhancement mode MOSFET. It has a compact size and is designed for high performance in power management applications. With a low on-resistance of 20mΩ and a maximum drain-source voltage of 60V, this MOSFET is capable of handling high power loads efficiently. It also has a high current rating of 22A, making it ideal for a variety of applications where power switching and voltage regulation are required. Additionally, the SQ2361AEES-T1_GE3 features a small form factor, making it suitable for space-constrained designs. Overall, this MOSFET offers reliability, high performance, and versatility for power management circuits