SIRA12BDP-T1-GE3

Name: SIRA12BDP-T1-GE3
Brand: Vishay Intertechnology
SKU: 4E4799-DS
Price: 0.3856 USD
Availability: InStock

MOSFET N-CH 30V 27A/60A PPAK SO8

1 : $0.3856

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Dasenic Part Number

4E4799-DS

Manufacturer

Vishay Intertechnology

Manufacturer Part #

SIRA12BDP-T1-GE3

Customer Reference

Datasheet

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Sample

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7200 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

PowerPAK® SO-8 Tape & Reel (TR) Cut Tape (CT) Dasenic-Reel®

Quantity

Unit Price

$ 0.3856

Total

$ 0.39

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Vishay Intertechnology
Discrete Semiconductor Devices	Single MOSFETs
Product Status	Active
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Supplier Device Package	PowerPAK® SO-8
Power Dissipation ( Max)	5W (Ta), 38W (Tc)
F E T Type	N-Channel
Drain to Source Voltage ( Vdss)	30 V
Current - Continuous Drain ( Id) @ 25° C	27A (Ta), 60A (Tc)
Rds On ( Max) @ Id, Vgs	4.3mOhm @ 10A, 10V
Vgs(th) ( Max) @ Id	2.4V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs	32 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds	1470 pF @ 15 V
Drive Voltage ( Max Rds On, Min Rds On)	4.5V, 10V
Vgs ( Max)	+20V, -16V
Series	TrenchFET® Gen IV
Base Product Number	SIRA12
Packaging	Dasenic-Reel®
Packaging	Cut Tape (CT)
Packaging	Tape & Reel (TR)

Kindly contact our sales Rep to obtain the data you desire for SIRA12BDP-T1-GE3.
lauren@dasenic.com

Environmental & Export Classifications

EU RoHS Status	ROHS3 Compliant
MSL Rating	1 (Unlimited, 30°C/85%RH)
US ECCN	EAR99
HTS US	8541.29.0095
REACH Status	REACH is not affected
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The SIRA12BDP-T1-GE3 is a discrete semiconductor component that features a P-channel MOSFET with a maximum drain-source voltage of 12V and a continuous drain current of 3.8A. This component is ideal for power management and load switching applications in various electronic devices. It has a low on-resistance of 36mΩ, ensuring efficient power delivery while minimizing power loss. The SIRA12BDP-T1-GE3 is housed in a compact package, making it suitable for small form factor designs. Additionally, this component has a high-speed switching capability, enabling quick response times in switching operations. Overall, the SIRA12BDP-T1-GE3 is a reliable and high-performance semiconductor component for a wide range of applications