SI7850DP-T1-E3

Name: SI7850DP-T1-E3
Brand: Vishay Intertechnology
SKU: 252187-DS
Price: 1.3919 USD
Availability: InStock

MOSFET N-CH 60V 6.2A PPAK SO-8

1 : $1.3919

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Dasenic Part Number

252187-DS

Manufacturer

Vishay Intertechnology

Manufacturer Part #

SI7850DP-T1-E3

Customer Reference

Datasheet

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Sample

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42722 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

PowerPAK® SO-8 Tape & Reel (TR) Cut Tape (CT) Dasenic-Reel®

Quantity

Unit Price

$ 1.3919

Total

$ 1.39

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Vishay Intertechnology
Discrete Semiconductor Devices	Single MOSFETs
Product Status	Active
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Supplier Device Package	PowerPAK® SO-8
Power Dissipation ( Max)	1.8W (Ta)
F E T Type	N-Channel
Drain to Source Voltage ( Vdss)	60 V
Current - Continuous Drain ( Id) @ 25° C	6.2A (Ta)
Rds On ( Max) @ Id, Vgs	22mOhm @ 10.3A, 10V
Vgs(th) ( Max) @ Id	3V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs	27 nC @ 10 V
Drive Voltage ( Max Rds On, Min Rds On)	4.5V, 10V
Vgs ( Max)	±20V
Series	TrenchFET®
Base Product Number	SI7850
Packaging	Dasenic-Reel®
Packaging	Cut Tape (CT)
Packaging	Tape & Reel (TR)

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Environmental & Export Classifications

EU RoHS Status	ROHS3 Compliant
MSL Rating	1 (Unlimited, 30°C/85%RH)
US ECCN	EAR99
HTS US	8541.29.0095
REACH Status	REACH is not affected
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The SI7850DP-T1-E3 is a discrete semiconductor component designed for power applications. It is a N-channel MOSFET with a voltage rating of 30V and a continuous drain current of 100A. The component is housed in a PowerPAK SC-75 package, making it compact and suitable for space-constrained applications. It has a low on-resistance of 4.5 mΩ, allowing for efficient power conduction. The SI7850DP-T1-E3 also has a fast switching speed, making it ideal for high-frequency applications. Additionally, it has a low gate charge, reducing power consumption and improving efficiency. Overall, this discrete semiconductor component is a reliable and high-performance solution for power management applications