The SI7613DN-T1-GE3 is a discrete semiconductor component manufactured by Vishay Intertechnology. This component is a dual N-channel enhancement mode MOSFET in a compact PowerPAK SC-70 package. It is designed for use in various applications such as load switching, power management, and battery protection.
Key features of the SI7613DN-T1-GE3 include a low on-resistance of 0.105 ohms, a maximum drain-source voltage of 30 volts, and a continuous drain current of 1.6 amps. This MOSFET also has a fast switching speed, high power density, and low gate charge.
Overall, the SI7613DN-T1-GE3 offers high performance and reliability in a small package, making it suitable for a wide range of industrial, automotive, and consumer electronics applications. Its compact size and excellent electrical characteristics make it an ideal choice for space-constrained designs requiring efficient power control