The SI7456DP-T1-GE3 is a discrete semiconductor component that is designed for high voltage applications. It is a P-channel MOSFET transistor with a maximum drain-source voltage of -30V and a continuous drain current of -12A. This component is ideal for power management applications where high voltage and current capabilities are required.
Key features of the SI7456DP-T1-GE3 include low gate threshold voltage, low on-resistance, and fast switching speeds. It also has a high transconductance, which allows for efficient power handling. The component is housed in a surface-mount package, making it easy to integrate into a variety of circuit designs. With its high voltage and current ratings, the SI7456DP-T1-GE3 is suitable for a wide range of applications, including solar inverters, motor controls, and power supplies. Its compact size and high performance make it a versatile and reliable choice for demanding applications
