SI7454DDP-T1-GE3

Name: STM32F051R8T6TR
Brand: STMicroelectronics
SKU: D86CC2-DS
Price: 2.9457 USD
Availability: InStock

MOSFET N-CH 100V 21A PPAK SO-8

1 : $1.0051

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Dasenic Part Number

4EF235-DS

Manufacturer

Vishay Intertechnology

Manufacturer Part #

SI7454DDP-T1-GE3

Customer Reference

Datasheet

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Sample

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17832 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

PowerPAK® SO-8 Tape & Reel (TR) Cut Tape (CT) Dasenic-Reel®

Quantity

Unit Price

$ 1.0051

Total

$ 1.01

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Vishay Intertechnology
Discrete Semiconductor Devices	Single MOSFETs
Product Status	Active
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Supplier Device Package	PowerPAK® SO-8
Power Dissipation ( Max)	4.1W (Ta), 29.7W (Tc)
F E T Type	N-Channel
Drain to Source Voltage ( Vdss)	100 V
Current - Continuous Drain ( Id) @ 25° C	21A (Tc)
Rds On ( Max) @ Id, Vgs	33mOhm @ 10A, 10V
Vgs(th) ( Max) @ Id	3V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs	19.5 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds	550 pF @ 50 V
Drive Voltage ( Max Rds On, Min Rds On)	4.5V, 10V
Vgs ( Max)	±20V
Series	TrenchFET®
Base Product Number	SI7454
Packaging	Dasenic-Reel®
Packaging	Cut Tape (CT)
Packaging	Tape & Reel (TR)

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Environmental & Export Classifications

EU RoHS Status	ROHS3 Compliant
MSL Rating	1 (Unlimited, 30°C/85%RH)
US ECCN	EAR99
HTS US	8541.29.0095
REACH Status	REACH is not affected
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The SI7454DDP-T1-GE3 is a discrete semiconductor component that is designed for high-speed switching applications in power management circuits. This component features a low reverse recovery time, high current capacity, and low forward voltage drop, making it ideal for use in power supplies, DC/DC converters, and motor control circuits. The SI7454DDP-T1-GE3 is a Schottky diode with a maximum forward current rating of 30A and a forward voltage drop of 0.49V at a forward current of 15A. It has a reverse recovery time of 25ns and a reverse leakage current of 200uA at a reverse voltage of 25V. This component is housed in a D-PAK package, which provides thermal and electrical isolation for improved performance and reliability. Overall, the SI7454DDP-T1-GE3 is a high-performance discrete semiconductor component that is well-suited for a wide range of power management applications