SI7135DP-T1-GE3

Name: SI7135DP-T1-GE3
Brand: Vishay Intertechnology
SKU: D933EE-DS
Price: 1.5066 USD
Availability: InStock

MOSFET P-CH 30V 60A PPAK SO-8

1 : $1.5066

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Dasenic Part Number

D933EE-DS

Manufacturer

Vishay Intertechnology

Manufacturer Part #

SI7135DP-T1-GE3

Customer Reference

Datasheet

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Sample

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21497 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

PowerPAK® SO-8 Tape & Reel (TR) Cut Tape (CT) Dasenic-Reel®

Quantity

Unit Price

$ 1.5066

Total

$ 1.51

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Vishay Intertechnology
Discrete Semiconductor Devices	Single MOSFETs
Product Status	Active
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Supplier Device Package	PowerPAK® SO-8
Power Dissipation ( Max)	6.25W (Ta), 104W (Tc)
F E T Type	P-Channel
Drain to Source Voltage ( Vdss)	30 V
Current - Continuous Drain ( Id) @ 25° C	60A (Tc)
Rds On ( Max) @ Id, Vgs	3.9mOhm @ 20A, 10V
Vgs(th) ( Max) @ Id	3V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs	250 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds	8650 pF @ 15 V
Drive Voltage ( Max Rds On, Min Rds On)	4.5V, 10V
Vgs ( Max)	±20V
Series	TrenchFET®
Base Product Number	SI7135
Packaging	Dasenic-Reel®
Packaging	Cut Tape (CT)
Packaging	Tape & Reel (TR)

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Environmental & Export Classifications

EU RoHS Status	ROHS3 Compliant
MSL Rating	1 (Unlimited, 30°C/85%RH)
US ECCN	EAR99
HTS US	8541.29.0095
REACH Status	REACH is not affected
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The SI7135DP-T1-GE3 is a high-performance discrete semiconductor component designed for use in a wide range of applications. This device features a low on-resistance, high current capability, and fast switching speeds, making it ideal for power management, battery charging, and motor control circuits. Key features of the SI7135DP-T1-GE3 include a maximum drain-source voltage of 30V, a continuous drain current of 35A, and a low on-resistance of 3.2mΩ. This component also has a high power density, allowing for compact designs in space-constrained applications. Additionally, the SI7135DP-T1-GE3 has a small form factor and a simple, robust package design that is easy to integrate into existing circuit layouts. Its high reliability and long-term stability make it a reliable choice for demanding applications where performance is essential. Overall, the SI7135DP-T1-GE3 offers high performance, reliability, and efficiency, making it an excellent choice for a variety of discrete semiconductor applications