The SI4816BDY-T1-E3 is a discrete semiconductor component that belongs to the family of MOSFET transistors. It is a P-channel enhancement mode field-effect transistor designed for high speed switching applications.
Key features of the SI4816BDY-T1-E3 include a low on-resistance of 90mΩ, a maximum drain-source voltage of -30V, and a drain current of -46A. It has a small form factor and comes in a compact DPAK (TO-252) package, making it suitable for use in space-constrained applications.
The SI4816BDY-T1-E3 offers high efficiency and reliability, making it ideal for use in power management circuits, battery protection systems, and DC-DC converters. It operates at high speed, allowing for efficient switching and optimized performance in various electronic applications. Its low on-resistance minimizes power loss, resulting in improved energy efficiency.
Overall, the SI4816BDY-T1-E3 is a versatile and high-performing discrete semiconductor component that is well-suited for a wide range of electronic applications that require high-speed switching capabilities
