SI4686DY-T1-E3

MOSFET N-CH 30V 18.2A 8SO

1 : $0.8307

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Dasenic Part Number

82EDD3-DS

Manufacturer

Vishay Intertechnology

Manufacturer Part #

SI4686DY-T1-E3

Customer Reference

Datasheet

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Sample

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14700 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

8-SOIC (0.154", 3.90mm Width)

Quantity

Unit Price

$ 0.8307

Total

$ 0.83

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Vishay Intertechnology
Discrete Semiconductor Devices	Single MOSFETs
Product Status	Active
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Supplier Device Package	8-SOIC
Power Dissipation ( Max)	3W (Ta), 5.2W (Tc)
F E T Type	N-Channel
Drain to Source Voltage ( Vdss)	30 V
Current - Continuous Drain ( Id) @ 25° C	18.2A (Tc)
Rds On ( Max) @ Id, Vgs	9.5mOhm @ 13.8A, 10V
Vgs(th) ( Max) @ Id	3V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs	26 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds	1220 pF @ 15 V
Drive Voltage ( Max Rds On, Min Rds On)	4.5V, 10V
Vgs ( Max)	±20V

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Environmental & Export Classifications

EU RoHS Status	RoHS Compliant
REACH Status	REACH is not affected
US ECCN	EAR99
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The SI4686DY-T1-E3 is a high-performance discrete semiconductor component designed for use in various electronic applications. It is a N-channel 30V (D-S) MOSFET with a low on-resistance and fast switching speed, making it ideal for power management and voltage regulation in a wide range of devices. Key features of the SI4686DY-T1-E3 include a low gate charge, high power density, and a compact package size. This MOSFET is designed for efficient power conversion and thermal management, with a maximum junction temperature of 175°C. The SI4686DY-T1-E3 is RoHS compliant and suitable for lead-free soldering processes. It is also designed for high reliability and performance in demanding operating conditions. This discrete semiconductor component is commonly used in consumer electronics, automotive applications, and industrial equipment