SI4630DY-T1-GE3

MOSFET N-CH 25V 40A 8SO

1 : $1.4047

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Dasenic Part Number

7CAFA3-DS

Manufacturer

Vishay Intertechnology

Manufacturer Part #

SI4630DY-T1-GE3

Customer Reference

Datasheet

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11208 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

8-SOIC (0.154", 3.90mm Width)

Quantity

Unit Price

$ 1.4047

Total

$ 1.4

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Vishay Intertechnology
Discrete Semiconductor Devices	Single MOSFETs
Product Status	Active
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Supplier Device Package	8-SOIC
Power Dissipation ( Max)	3.5W (Ta), 7.8W (Tc)
F E T Type	N-Channel
Drain to Source Voltage ( Vdss)	25 V
Current - Continuous Drain ( Id) @ 25° C	40A (Tc)
Rds On ( Max) @ Id, Vgs	2.7mOhm @ 20A, 10V
Vgs(th) ( Max) @ Id	2.2V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs	161 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds	6670 pF @ 15 V
Drive Voltage ( Max Rds On, Min Rds On)	4.5V, 10V
Vgs ( Max)	±16V

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Environmental & Export Classifications

EU RoHS Status	RoHS Compliant
REACH Status	REACH is not affected
US ECCN	EAR99
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The SI4630DY-T1-GE3 is a discrete semiconductor component from Vishay Semiconductor. It is a dual N-channel 30V (D-S) MOSFET in a PowerPAK SO-8L package. This MOSFET features low gate charge, low on-resistance, and fast switching speeds, making it ideal for high-efficiency power management applications. It has a maximum drain-source voltage of 30V and a continuous drain current of 6A. The SI4630DY-T1-GE3 is RoHS compliant and can operate at temperatures ranging from -55°C to 150°C. Its compact package size and high performance make it suitable for a wide range of applications including DC-DC converters, motor drives, battery management systems, and more