The SI2365EDS-T1-GE3 is a discrete semiconductor component that is designed for use in a variety of electronic applications. This component is a P-Channel MOSFET transistor with a maximum voltage rating of 20V and a continuous drain current of 2.7A.
One key feature of the SI2365EDS-T1-GE3 is its low on-state resistance, which allows for efficient power handling and minimal power loss. This makes it ideal for use in battery-powered devices or other applications where power efficiency is critical.
Another important feature of this component is its small form factor, measuring just 2mm x 2mm, which makes it suitable for use in compact and space-constrained designs.
Overall, the SI2365EDS-T1-GE3 offers a combination of high performance, efficiency, and compact size, making it a versatile component for a wide range of electronic applications