The SI2323DDS-T1-GE3 is a low voltage, small signal MOSFET (Metal Oxide Semiconductor Field Effect Transistor) discrete semiconductor component. It is designed for use in various electronic applications where high-speed switching and low power consumption are required.
Key features of the SI2323DDS-T1-GE3 include a low on-resistance of 1.1 ohms, a low threshold voltage of 0.6V, and a high maximum drain current of 3.5A. Its small package size (SOT-23) makes it suitable for use in compact and portable devices. This component also has a fast switching speed, which makes it ideal for applications that require high frequency operation.
The SI2323DDS-T1-GE3 is RoHS compliant, ensuring that it meets environmental standards for hazardous substances. Overall, this discrete semiconductor component is a reliable and efficient choice for designing low voltage electronic circuits that require high performance and reliability
