SI2319CDS-T1-GE3

MOSFET P-CH 40V 4.4A SOT23-3

1 : $0.4950

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Dasenic Part Number

382FD0-DS

Manufacturer

Vishay Intertechnology

Manufacturer Part #

SI2319CDS-T1-GE3

Customer Reference

Datasheet

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20337 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

SOT-23

Quantity

Unit Price

$ 0.495

Total

$ 0.49

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Vishay Intertechnology
Discrete Semiconductor Devices	Single MOSFETs
Product Status	Active
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Supplier Device Package	SOT-23-3 (TO-236)
Power Dissipation ( Max)	1.25W (Ta), 2.5W (Tc)
F E T Type	P-Channel
Drain to Source Voltage ( Vdss)	40 V
Current - Continuous Drain ( Id) @ 25° C	4.4A (Tc)
Rds On ( Max) @ Id, Vgs	77mOhm @ 3.1A, 10V
Vgs(th) ( Max) @ Id	2.5V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs	21 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds	595 pF @ 20 V
Drive Voltage ( Max Rds On, Min Rds On)	4.5V, 10V
Vgs ( Max)	±20V
Series	TrenchFET®
Base Product Number	SI2319
Packaging	Dasenic-Reel®
Packaging	Cut Tape (CT)
Packaging	Tape & Reel (TR)

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Environmental & Export Classifications

EU RoHS Status	ROHS3 Compliant
MSL Rating	1 (Unlimited, 30°C/85%RH)
REACH Status	REACH Unaffected
US ECCN	EAR99
HTS US	8541.29.0095
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The SI2319CDS-T1-GE3 is a discrete semiconductor component that falls under the category of MOSFET transistors. It is a P-channel MOSFET with a maximum drain-source voltage of -30V and a continuous drain current of -1.4A. This component is designed for use in a variety of applications such as power management, motor control, and DC-DC converters due to its high performance and efficiency. It features low on-resistance, fast switching speed, and low gate threshold voltage, making it ideal for high-frequency switching circuits. Additionally, the SI2319CDS-T1-GE3 is offered in a compact SOT-23 package, making it easy to implement in a compact circuit design. Overall, this discrete semiconductor component is a reliable and versatile option for various electronic applications