SI2318CDS-T1-GE3

MOSFET N-CH 40V 5.6A SOT23-3

1 : $0.3960

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Dasenic Part Number

40AE4E-DS

Manufacturer

Vishay Intertechnology

Manufacturer Part #

SI2318CDS-T1-GE3

Customer Reference

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13988 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

SOT-23

Quantity

Unit Price

$ 0.396

Total

$ 0.4

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Vishay Intertechnology
Discrete Semiconductor Devices	Single MOSFETs
Product Status	Active
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Supplier Device Package	SOT-23-3 (TO-236)
Power Dissipation ( Max)	1.25W (Ta), 2.1W (Tc)
F E T Type	N-Channel
Drain to Source Voltage ( Vdss)	40 V
Current - Continuous Drain ( Id) @ 25° C	5.6A (Tc)
Rds On ( Max) @ Id, Vgs	42mOhm @ 4.3A, 10V
Vgs(th) ( Max) @ Id	2.5V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs	9 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds	340 pF @ 20 V
Drive Voltage ( Max Rds On, Min Rds On)	4.5V, 10V
Vgs ( Max)	±20V
Series	TrenchFET®
Base Product Number	SI2318
Packaging	Dasenic-Reel®
Packaging	Cut Tape (CT)
Packaging	Tape & Reel (TR)

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Environmental & Export Classifications

EU RoHS Status	ROHS3 Compliant
MSL Rating	1 (Unlimited, 30°C/85%RH)
REACH Status	REACH Unaffected
US ECCN	EAR99
HTS US	8541.29.0095
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The SI2318CDS-T1-GE3 is a N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) discrete semiconductor component, designed for use in various electronic circuits. With a maximum voltage rating of 30V and a continuous drain current of 9.6A, this MOSFET offers high performance and efficiency in power management applications. The SI2318CDS-T1-GE3 features a low on-state resistance of 34mOhms, allowing for minimal power loss and high efficiency operation. It is housed in a compact, space-saving SOT-23 package, making it suitable for small form factor designs. This component also boasts a fast switching speed and low gate charge, enabling rapid and precise control of power flow. Overall, the SI2318CDS-T1-GE3 is a versatile and reliable discrete semiconductor component for a wide range of applications