SI2312BDS-T1-E3

Name: ADS826E/1K
Brand: Texas Instruments
SKU: 2EF088-DS
Price: 12.456 USD
Availability: InStock

Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

1 : $0.2803

First-time registration with orders over $2,000 receives a $100 coupon. Register Now !

Dasenic Part Number

78AD52-DS

Manufacturer

Vishay Intertechnology

Manufacturer Part #

SI2312BDS-T1-E3

Customer Reference

Datasheet

Download

Sample

Technical Support
Issue An Invoice
365 Days Warranty
Fast Refund

47024 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

SOT-23

Quantity

Unit Price

$ 0.2803

Total

$ 0.28

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Vishay Intertechnology
Discrete Semiconductor Devices	Single MOSFETs
Product Status	Active
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Supplier Device Package	SOT-23-3 (TO-236)
Power Dissipation ( Max)	750mW (Ta)
F E T Type	N-Channel
Drain to Source Voltage ( Vdss)	20 V
Current - Continuous Drain ( Id) @ 25° C	3.9A (Ta)
Rds On ( Max) @ Id, Vgs	31mOhm @ 5A, 4.5V
Vgs(th) ( Max) @ Id	850mV @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs	12 nC @ 4.5 V
Drive Voltage ( Max Rds On, Min Rds On)	1.8V, 4.5V
Vgs ( Max)	±8V

Kindly contact our sales Rep to obtain the data you desire for SI2312BDS-T1-E3.
lauren@dasenic.com

Environmental & Export Classifications

EU RoHS Status	RoHS Compliant
REACH Status	REACH is not affected
US ECCN	EAR99
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The SI2312BDS-T1-E3 is a discrete semiconductor component that is a P-channel enhancement mode field-effect transistor (FET). This transistor is designed for low power applications with a maximum drain-source voltage of -20V and a continuous drain current of -2.4A. Key features of the SI2312BDS-T1-E3 include a low on-resistance of 120mΩ, making it suitable for applications where power dissipation and efficiency are important. It also has a low threshold voltage of -1.1V, allowing for compatibility with low voltage systems. This FET is housed in a small SOT-23 package, making it ideal for space-constrained applications. It has a maximum junction temperature of 150°C, ensuring reliable performance in a wide range of operating conditions. Overall, the SI2312BDS-T1-E3 is a versatile and efficient discrete semiconductor component that can be used in a variety of low power applications where high performance is critical