SI2301CDS-T1-GE3

Name: SI2301CDS-T1-GE3
Brand: Vishay Intertechnology
SKU: CF7BF1-DS
Price: 0.1172 USD
Availability: InStock

MOSFET P-CH 20V 3.1A SOT23-3

1 : $0.1172

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Dasenic Part Number

CF7BF1-DS

Manufacturer

Vishay Intertechnology

Manufacturer Part #

SI2301CDS-T1-GE3

Customer Reference

Datasheet

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Sample

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47364 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

SOT-23

Quantity

Unit Price

$ 0.1172

Total

$ 0.12

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Vishay Intertechnology
Discrete Semiconductor Devices	Single MOSFETs
Product Status	Active
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Supplier Device Package	SOT-23-3 (TO-236)
Power Dissipation ( Max)	860mW (Ta), 1.6W (Tc)
F E T Type	P-Channel
Drain to Source Voltage ( Vdss)	20 V
Current - Continuous Drain ( Id) @ 25° C	3.1A (Tc)
Rds On ( Max) @ Id, Vgs	112mOhm @ 2.8A, 4.5V
Vgs(th) ( Max) @ Id	1V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs	10 nC @ 4.5 V
Input Capacitance ( Ciss) ( Max) @ Vds	405 pF @ 10 V
Drive Voltage ( Max Rds On, Min Rds On)	2.5V, 4.5V
Vgs ( Max)	±8V

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Environmental & Export Classifications

EU RoHS Status	RoHS Compliant
REACH Status	REACH is not affected
US ECCN	EAR99
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The SI2301CDS-T1-GE3 is a discrete semiconductor component manufactured by Vishay Siliconix. This component is a P-channel enhancement mode MOSFET with a maximum drain-source voltage of -20V and a continuous drain current of -2.2A. The SI2301CDS-T1-GE3 is housed in a compact SC-70 package, making it suitable for applications where space is limited. This component is RoHS-compliant, ensuring it meets environmental regulations. The SI2301CDS-T1-GE3 is designed for use in power management and battery protection applications, offering high performance and reliability in a small form factor