SI1308EDL-T1-GE3

Name: SI1308EDL-T1-GE3
Brand: Vishay Intertechnology
SKU: 0E2822-DS
Price: 0.1726 USD
Availability: InStock

MOSFET N-CH 30V 1.4A SOT323

1 : $0.1726

First-time registration with orders over $2,000 receives a $100 coupon. Register Now !

Dasenic Part Number

0E2822-DS

Manufacturer

Vishay Intertechnology

Manufacturer Part #

SI1308EDL-T1-GE3

Customer Reference

Datasheet

Download

Sample

Technical Support
Issue An Invoice
365 Days Warranty
Fast Refund

34522 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

SOT-323

Quantity

Unit Price

$ 0.1726

Total

$ 0.17

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Vishay Intertechnology
Discrete Semiconductor Devices	Single MOSFETs
Product Status	Active
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	SC-70, SOT-323
Technology	MOSFET (Metal Oxide)
Supplier Device Package	SC-70-3
Power Dissipation ( Max)	400mW (Ta), 500mW (Tc)
F E T Type	N-Channel
Drain to Source Voltage ( Vdss)	30 V
Current - Continuous Drain ( Id) @ 25° C	1.4A (Tc)
Rds On ( Max) @ Id, Vgs	132mOhm @ 1.4A, 10V
Vgs(th) ( Max) @ Id	1.5V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs	4.1 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds	105 pF @ 15 V
Drive Voltage ( Max Rds On, Min Rds On)	2.5V, 10V
Vgs ( Max)	±12V

Kindly contact our sales Rep to obtain the data you desire for SI1308EDL-T1-GE3.
lauren@dasenic.com

Environmental & Export Classifications

EU RoHS Status	RoHS Compliant
REACH Status	REACH is not affected
US ECCN	EAR99
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The SI1308EDL-T1-GE3 is a discrete semiconductor component that is a dual P-channel MOSFET designed for use in power management applications. It has a maximum drain-source voltage of -20V and a maximum drain current of -2.8A. The component is housed in a compact DFN package, making it suitable for space-constrained designs. The SI1308EDL-T1-GE3 features a low threshold voltage, allowing for efficient power dissipation and low on-state resistance. It also has a fast switching speed and low gate charge, making it ideal for high frequency applications. Overall, the SI1308EDL-T1-GE3 is a versatile and reliable component for power management circuits