IRFPG50PBF

MOSFET N-CH 1000V 6.1A TO247-3

1 : $2.3220

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Dasenic Part Number

C5A77E-DS

Manufacturer

Vishay Intertechnology

Manufacturer Part #

IRFPG50PBF

Customer Reference

Datasheet

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Sample

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12000 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

TO-247-3 Tube

Quantity

Unit Price

$ 2.322

Total

$ 2.32

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Vishay Intertechnology
Discrete Semiconductor Devices	Single MOSFETs
Product Status	Active
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Technology	MOSFET (Metal Oxide)
Supplier Device Package	TO-247AC
Power Dissipation ( Max)	190W (Tc)
F E T Type	N-Channel
Drain to Source Voltage ( Vdss)	1000 V
Current - Continuous Drain ( Id) @ 25° C	6.1A (Tc)
Rds On ( Max) @ Id, Vgs	2Ohm @ 3.6A, 10V
Vgs(th) ( Max) @ Id	4V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs	190 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds	2800 pF @ 25 V
Drive Voltage ( Max Rds On, Min Rds On)	10V
Vgs ( Max)	±20V
Base Product Number	IRFPG50

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Environmental & Export Classifications

EU RoHS Status	ROHS3 Compliant
MSL Rating	1 (Unlimited, 30°C/85%RH)
US ECCN	EAR99
HTS US	8541.29.0095
REACH Status	REACH is not affected
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The IRFPG50PBF is a power MOSFET transistor designed for high power applications. It features a high voltage rating of 100V, a continuous drain current of 57A, and a low on-resistance of 0.02 ohms. This makes it suitable for use in power supplies, motor control, and other high current applications. The IRFPG50PBF is housed in a TO-247 package, which provides a good thermal conductivity for efficient heat dissipation. It also has a gate threshold voltage of 2-4V, allowing for easy interfacing with microcontrollers and other digital circuits. Additionally, its PBF feature means that it is lead-free and compliant with RoHS regulations. Overall, the IRFPG50PBF is a reliable and high-performance discrete semiconductor component for power applications