IRFD110PBF

Name: IRFD110PBF
Brand: Vishay Intertechnology
SKU: 1B3A14-DS
Price: 0.6795 USD
Availability: InStock

MOSFET N-CH 100V 1A 4DIP

1 : $0.6795

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Dasenic Part Number

1B3A14-DS

Manufacturer

Vishay Intertechnology

Manufacturer Part #

IRFD110PBF

Customer Reference

Datasheet

Download

Sample

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365 Days Warranty
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45530 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

4-DIP (0.300", 7.62mm) Tube

Quantity

Unit Price

$ 0.6795

Total

$ 0.68

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Vishay Intertechnology
Discrete Semiconductor Devices	Single MOSFETs
Product Status	Active
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	4-DIP (0.300", 7.62mm)
Technology	MOSFET (Metal Oxide)
Supplier Device Package	4-HVMDIP
Power Dissipation ( Max)	1.3W (Ta)
F E T Type	N-Channel
Drain to Source Voltage ( Vdss)	100 V
Current - Continuous Drain ( Id) @ 25° C	1A (Ta)
Rds On ( Max) @ Id, Vgs	540mOhm @ 600mA, 10V
Vgs(th) ( Max) @ Id	4V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs	8.3 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds	180 pF @ 25 V
Drive Voltage ( Max Rds On, Min Rds On)	10V
Vgs ( Max)	±20V
Base Product Number	IRFD110
Packaging	Tube

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Environmental & Export Classifications

EU RoHS Status	ROHS3 Compliant
MSL Rating	1 (Unlimited, 30°C/85%RH)
US ECCN	EAR99
HTS US	8541.29.0095
REACH Status	REACH is not affected
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The IRFD110PBF is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) discrete semiconductor component with a high current rating of 1.1A and a low on-resistance of 3.6 ohms. This N-channel transistor is ideal for switching and amplification applications, offering fast switching speeds and low power consumption. With a breakdown voltage of 100V, it can handle high voltage applications reliably. The IRFD110PBF is housed in a compact TO-252 package, making it easy to incorporate into various circuit designs. Overall, this semiconductor component is a versatile and reliable option for engineers looking to optimize their circuit performance