The 2N7002K-T1-E3 is a N-channel enhancement mode MOSFET designed for switching applications in various electronic circuits. This discrete semiconductor component has a maximum drain-source voltage of 60V and a continuous drain current of 330mA. It features low on-resistance, fast switching speeds, and high thermal conductivity, making it ideal for use in low voltage applications. The 2N7002K-T1-E3 comes in a compact SOT-23 surface mount package, making it easy to integrate into circuit designs. Additionally, it has a low gate threshold voltage, allowing for efficient and reliable operation. Overall, this MOSFET is a versatile and reliable component suitable for a wide range of applications in electronics