The CSD17309Q3 is a N-channel, logic level, enhancement-mode power MOSFET designed for high-speed switching applications. It is housed in a small 2x2 mm SON package, making it suitable for space-constrained designs.
This MOSFET has a low on-state resistance of 0.38 ohms, allowing for efficient power transfer and minimal power loss. It also has a high continuous drain current of 3.5A, making it suitable for a wide range of applications including power management, motor control, and DC-DC conversion.
The CSD17309Q3 also features a low gate charge of 1.6nC, enabling fast switching speeds and reducing switching losses. It has a low threshold voltage of 1.1V, making it compatible with 5V logic level signals.
Overall, the CSD17309Q3 is a high-performance discrete semiconductor component ideal for applications requiring high-speed switching and efficient power transfer
