STW24NM60N

Name: BM2SC122FP2-LBZE2
Brand: ROHM Semiconductor
SKU: BF91F3-DS
Price: 10.989 USD
Availability: InStock

MOSFET N-CH 600V 17A TO247

1 : $5.5440

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Dasenic Part Number

FB1D50-DS

Manufacturer

STMicroelectronics

Manufacturer Part #

STW24NM60N

Customer Reference

Datasheet

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Sample

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1660 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

TO-247-3

Quantity

Unit Price

$ 5.544

Total

$ 5.54

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	STMicroelectronics
Discrete Semiconductor Devices	Single MOSFETs
Product Status	Obsolete
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Supplier Device Package	TO-247-3
Power Dissipation ( Max)	125W (Tc)
F E T Type	N-Channel
Drain to Source Voltage ( Vdss)	600 V
Current - Continuous Drain ( Id) @ 25° C	17A (Tc)
Rds On ( Max) @ Id, Vgs	190mOhm @ 8A, 10V
Vgs(th) ( Max) @ Id	4V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs	46 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds	1400 pF @ 50 V
Drive Voltage ( Max Rds On, Min Rds On)	10V
Vgs ( Max)	±30V

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Environmental & Export Classifications

EU RoHS Status	RoHS Compliant
REACH Status	Vendor is not defined
US ECCN	Provided as per user requirements
China RoHS Status	Orange Symbol: Safe for use during the environmental protection period

Description (v) Features

The STW24NM60N is a power MOSFET transistor designed for switching applications in power supplies, motor control, and lighting systems. It features a low on-resistance of 0.15 ohms, allowing for efficient power conversion with minimal power loss. The device has a maximum drain current of 24A and a drain-source voltage of 600V, making it suitable for medium to high power applications. The STW24NM60N also has a fast switching speed, reducing switching losses and improving efficiency. It is housed in a TO-247 package for easy mounting on a heatsink for thermal management. Overall, the STW24NM60N is a reliable and high-performance discrete semiconductor component for a wide range of applications requiring high power switching