STPSC6H065D

Name: STPSC6H065D
Brand: STMicroelectronics
SKU: 75FB6E-DS
Price: 1.935 USD
Availability: InStock

DIODE SCHOTTKY 650V 6A TO220AC

1 : $1.9350

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Dasenic Part Number

75FB6E-DS

Manufacturer

STMicroelectronics

Manufacturer Part #

STPSC6H065D

Customer Reference

Datasheet

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Sample

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6000 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

TO-220-2

Quantity

Unit Price

$ 1.935

Total

$ 1.94

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	STMicroelectronics
Discrete Semiconductor Devices	Schottky Diodes
Product Status	Active
Mounting Type	Through Hole
Package / Case	TO-220-2
Supplier Device Package	TO-220AC
Speed	No Recovery Time > 500mA (Io)
Diode Type	Silicon Carbide Schottky
Current - Average Rectified ( Io)	6A
Voltage - Forward ( Vf) ( Max) @ If	1.75 V @ 6 A
Current - Reverse Leakage @ Vr	60 µA @ 650 V
Capacitance @ Vr, F	300pF @ 0V, 1MHz
Voltage - D C Reverse ( Vr) ( Max)	650 V
Reverse Recovery Time (trr)	0 ns
Operating Temperature - Junction	-40°C ~ 175°C

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Environmental & Export Classifications

EU RoHS Status	RoHS Compliant
REACH Status	REACH is not affected
US ECCN	EAR99
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

This 6 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.This STPSC6H065 is especially suited for use in PFC applications. This ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.