STGWT40H65DFB

TO-3PN IGBTs

1 : $4.3470

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Dasenic Part Number

1FDA0E-DS

Manufacturer

STMicroelectronics

Manufacturer Part #

STGWT40H65DFB

Customer Reference

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1777 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

TO-3PN

Quantity

Unit Price

$ 4.347

Total

$ 4.35

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	STMicroelectronics
Discrete Semiconductor Devices	Insulated Gate Bipolar Transistors (IGBTs)
Product Status	Active
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Input Type	Standard
Power - Max	283 W
Supplier Device Package	TO-3P
Reverse Recovery Time (trr)	62 ns
Current - Collector ( Ic) ( Max)	80 A
Voltage - Collector Emitter Breakdown ( Max)	650 V
I G B T Type	Trench Field Stop
Vce(on) ( Max) @ Vge, Ic	2V @ 15V, 40A
Current - Collector Pulsed ( Icm)	160 A
Switching Energy	498µJ (on), 363µJ (off)
Gate Charge	210 nC
Td (on/off) @ 25° C	40ns/142ns
Test Condition	400V, 40A, 5Ohm, 15V

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Environmental & Export Classifications

EU RoHS Status	RoHS Compliant
REACH Status	REACH is not affected
US ECCN	EAR99
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.