The STD2HNK60Z is a N-channel power MOSFET designed for high performance applications. It is a discrete semiconductor component with a maximum voltage rating of 600V and a continuous drain current of 2A. The low on-resistance of 2.5 ohms ensures efficient power handling and minimal power loss. This MOSFET also has a fast switching speed and low gate charge, making it suitable for use in high frequency applications. The STD2HNK60Z is housed in a TO-252 package, which provides good thermal performance for reliable operation in various operating conditions. Overall, the key features of this discrete semiconductor component include high voltage and current ratings, low on-resistance, fast switching speed, low gate charge, and reliable packaging for optimal performance
