Manufacturer | ROHM Semiconductor |
Discrete Semiconductor Devices | Single, Pre-Biased Bipolar Transistors |
Product Status | Active |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Power - Max | 200 mW |
Supplier Device Package | SMT3 |
Transistor Type | PNP - Pre-Biased |
Current - Collector ( Ic) ( Max) | 500 mA |
Voltage - Collector Emitter Breakdown ( Max) | 50 V |
Vce Saturation ( Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff ( Max) | 500nA |
D C Current Gain (h F E) ( Min) @ Ic, Vce | 56 @ 50mA, 5V |
Frequency - Transition | 200 MHz |
Resistor - Base ( R1) | 1 kOhms |
Resistor - Emitter Base ( R2) | 10 kOhms |