The 2SB1181TLR is a PNP bipolar junction transistor (BJT) which is commonly used in electronic circuits for amplification and switching purposes. It is designed for high-voltage applications with a maximum collector-emitter voltage of 120V and a continuous collector current of 1.5A.
Key features of the 2SB1181TLR include its compact and lightweight TO-126 packaging, making it easy to integrate into circuit designs. It has a low collector-emitter saturation voltage and high current gain, making it suitable for low-power applications where efficiency is important.
The transistor has a high transition frequency of 150MHz, allowing for fast switching speeds in high-frequency applications. It also has a maximum power dissipation of 0.8W, ensuring reliable performance under various operating conditions. Overall, the 2SB1181TLR is a versatile and dependable discrete semiconductor component for various electronic applications
