MJ11033G

Name: MAX20323ENC+T
Brand: Maxim Integrated
SKU: D1BC3A-DS
Availability: InStock

1000@25A,5V 120V PNP 50A 300W TO-204 Darlington Transistors

1 : $6.1290

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Dasenic Part Number

6FF439-DS

Manufacturer

Onsemi

Manufacturer Part #

MJ11033G

Customer Reference

Datasheet

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Sample

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10542 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

TO-204

Quantity

Unit Price

$ 6.129

Total

$ 6.13

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Onsemi
Discrete Semiconductor Devices	Single, Pre-Biased Bipolar Transistors
Product Status	Active
Operating Temperature	-55°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-204AE
Power - Max	300 W
Supplier Device Package	TO-204 (TO-3)
Transistor Type	PNP - Darlington
Current - Collector ( Ic) ( Max)	50 A
Voltage - Collector Emitter Breakdown ( Max)	120 V
Vce Saturation ( Max) @ Ib, Ic	3.5V @ 500mA, 50A
Current - Collector Cutoff ( Max)	2mA
D C Current Gain (h F E) ( Min) @ Ic, Vce	1000 @ 25A, 5V
Base Product Number	MJ11033
Packaging	Tray

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Environmental & Export Classifications

EU RoHS Status	ROHS3 Compliant
MSL Rating	Vendor omitted MSL Rating information
REACH Status	REACH Unaffected
US ECCN	EAR99
HTS US	8541.29.0095
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The MJ11033G is a high-performance discrete semiconductor component designed for power and switching applications. It is a Darlington transistor with a high current gain and is capable of handling up to 30A of continuous collector current. The device has a maximum voltage rating of 100V and a low saturation voltage, making it suitable for high-power switching applications. The MJ11033G is housed in a TO-3 package, which allows for efficient heat dissipation and high reliability. It also features a built-in freewheeling diode for efficient protection against inductive kickback. Overall, the MJ11033G is a reliable and high-performance discrete semiconductor component ideal for power electronics applications