The ISO5852S device is a
5.7-kV RMS, reinforced isolated gate driver for IGBTs and MOSFETs with
split outputs, OUTH and OUTL, providing 2.5-A source and 5-A sink current. The input
side operates from a single 2.25-V to 5.5-V supply. The output side allows for a
supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs
control the output state of the gate driver. The short propagation time of 76 ns
provides accurate control of the output stage.An internal desaturation (DESAT) fault
detection recognizes when the IGBT is in an overcurrent condition. Upon a DESAT
detect, a mute logic immediately blocks the output of the isolator and initiates a
soft-turnoff procedure which disables the OUTH pin and pulls the OUTL pin to low
over a time span of 2 µs. When the OUTL pin reaches 2 V with respect to the
most-negative supply potential, V EE2, the gate-driver output is pulled
hard to the V EE2 potential, turning the IGBT immediately off.When desaturation is active, a fault signal is sent across the isolation barrier, pulling the
FLT output at the input side low and blocking the isolator input. Mute logic is activated through the soft-turnoff period. The
FLT output condition is latched and can be reset only after the RDY pin goes high, through a low-active pulse at the
RST input.When the IGBT is turned off during normal operation with a bipolar output supply, the output is hard clamp to V EE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low-impedance path which prevents the IGBT from dynamic turnon during high-voltage transient conditions.The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input-side and output-side supplies. If either side has insufficient supply, the RDY output goes low, otherwise this output is high.The ISO5852S device is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.
