IRLB3813PBF

MOSFET N-CH 30V 260A TO220AB

1 : $0.9154

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Dasenic Part Number

5A95F0-DS

Manufacturer

Infineon Technologies

Manufacturer Part #

IRLB3813PBF

Customer Reference

Datasheet

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Sample

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18335 In Stock

MOQ

1PCS

Delivery Time

Ship Within 48 Hours

Packaging

TO-220-3

Quantity

Unit Price

$ 0.9154

Total

$ 0.92

* Tax not included , All prices are in USD

Pricing (USD)

Prices are for reference only and aren't final sales prices.

Manufacturer	Infineon Technologies
Discrete Semiconductor Devices	Single MOSFETs
Product Status	Active
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Supplier Device Package	TO-220AB
Power Dissipation ( Max)	230W (Tc)
F E T Type	N-Channel
Drain to Source Voltage ( Vdss)	30 V
Current - Continuous Drain ( Id) @ 25° C	260A (Tc)
Rds On ( Max) @ Id, Vgs	1.95mOhm @ 60A, 10V
Vgs(th) ( Max) @ Id	2.35V @ 150µA
Gate Charge ( Qg) ( Max) @ Vgs	86 nC @ 4.5 V
Input Capacitance ( Ciss) ( Max) @ Vds	8420 pF @ 15 V
Drive Voltage ( Max Rds On, Min Rds On)	4.5V, 10V
Vgs ( Max)	±20V

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Environmental & Export Classifications

EU RoHS Status	RoHS Compliant
REACH Status	REACH is not affected
US ECCN	EAR99
China RoHS Status	Green Symbol: Green and environmentally friendly product

Description (v) Features

The IRLB3813PBF is a N-Channel power MOSFET manufactured by Infineon Technologies. It is designed for use in a wide range of applications, including motor control, DC-DC converters, and power management systems. Key features of the IRLB3813PBF include a maximum drain-source voltage of 30V, a continuous drain current of 180A, and a low on-resistance of 3.5mOhm. These specifications make it suitable for high-power, high-efficiency applications where low power dissipation is crucial. The MOSFET is housed in a TO-220 package, making it easy to mount on a variety of surfaces. It has a gate threshold voltage of 2V, making it compatible with most logic-level gate drive circuits. Overall, the IRLB3813PBF is a reliable and high-performance discrete semiconductor component that is suitable for a wide range of power electronics applications